Serial Eeprom Programmer 93c56

93C56
93C562K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM

Request STMicroelectronics 93C56: 93C562K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM online from Elcodis, view and download 93C56 pdf datasheet, STMicroelectronics specifications. Serial Eeprom Programmer 93c56 Rating: 8,1/10 4671 reviews Today we're going to learn how to read and write serial EEPROM devices using. Could only be written to once using a high-voltage programming device.

STMicroelectronics
1.93C56.pdf (12 pages)

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ISSI
2 070
  • Current page: 1 of 12
• Single supply 5.0V operation
• 256 x 8 bit organization (93C56A)
• Self-timed ERASE and WRITE cycles (including
• Power on/off data protection circuitry
Eeprom
• Device status signal during ERASE/WRITE
• 100,000 E/W cycles guaranteed
• 8-pin PDIP and SOIC packages
DESCRIPTION
The Microchip Technology Inc. 93C56A/B is a 2K-bit,
low-voltage serial Electrically Erasable PROM. The
device memory is configured as 256 x 8 bits (93C56A)
ogy makes this device ideal for low-power, nonvolatile
standard 8-pin DIP and surface mount SOIC packages.
temperature applications. For all commercial and
mended.
Microwire is a registered trademark of National Semiconductor.
- 1 A standby current (maximum)
cycles
1998 Microchip Technology Inc.
-40 C to
Preliminary
BLOCK DIAGRAM
CS
PDIP
GENERATOR
REGISTER
DECODE
CLK
ARRAY
CLOCK
DATA
DI
DO
DI
1
3
1
3
V
COUNTER
DECODER
8
6
8
6
V
NC
V
SS
SS
NC
V
BUFFER
SS

93C56 Summary of contents

Page 1

... DESCRIPTION The Microchip Technology Inc. 93C56A 2K-bit, low-voltage serial Electrically Erasable PROM. The device memory is configured as 256 x 8 bits (93C56A) or 128 x 16 bits (93C56B). Advanced CMOS technol- ogy makes this device ideal for low-power, nonvolatile memory applications. The 93C56A/B is available in standard 8-pin DIP and surface mount SOIC packages ...

Page 2

... ELECTRICAL CHARACTERISTICS 1.1 Maximum Ratings* ...................................................................................7. All inputs and outputs w.r.t. ................ -0.6V to Vcc +1. Storage temperature .....................................- +150 C Ambient temp. with power applied.................- +125 C Soldering temperature of leads (10 seconds) ............. +300 C ESD protection on all pins................................................4 kV *Notice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device ...

Page 3

... RESET status. 2.2 Serial Clock (CLK) The Serial Clock is used to synchronize the communi- cation between a master device and the 93C56A/B. Opcode, address, and data bits are clocked in on the positive edge of CLK. Data bits are also clocked out on the positive edge of CLK. ...

93c56 Eeprom Programmer

Page 4

... FUNCTIONAL DESCRIPTION Instructions, addresses, and write data are clocked into the DI pin on the rising edge of the clock (CLK). The DO pin is normally held in a HIGH-Z state except when reading data from the device, or when checking the READY/BUSY status during a programming operation. ...

Page 5

... ERAL cycle is com- CSL plete. T CSL ••• CSL 0 X ••• Preliminary 93C56A/B CHECK STATUS BUSY READY HIGH-Z CHECK STATUS BUSY READY HIGH-Z DS21206B-page 5 ...

Page 6

... The READ instruction outputs the serial data of the addressed memory location on the DO pin. A dummy zero bit precedes the 8-bit (93C56A) or 16-bit (93C56B) output string. The output data bits will toggle on the rising edge of the CLK and are stable after the specified time delay (T when CS is held high ...

Page 7

Serial Eeprom Programmer

... WRITE The WRITE instruction is followed by 8-bits (93C56A) 16-bits (93C56B) of data which are written into the specified address. After the last data bit is clocked into the DI pin, the self-timed auto-erase and programming cycle begins. The DO pin indicates the READY/BUSY status of the ...

Page 8

... NOTES: DS21206B-page 8 Preliminary 1998 Microchip Technology Inc. ...

Page 9

... NOTES: 1998 Microchip Technology Inc. Preliminary 93C56A/B DS21206B-page 9 ...

Page 10

... NOTES: DS21206B-page 10 Preliminary 1998 Microchip Technology Inc. ...

Page 11

... PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. 93C56A/B /P Package: Temperature Range: Device: Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom- mended workarounds ...

Page 12

M W ORLDWIDE AMERICAS Corporate Office Microchip Technology Inc. 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 602-786-7200 Fax: 602-786-7277 Technical Support: 602 786-7627 Web: http://www.microchip.com Atlanta Microchip Technology Inc. 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: ...

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93C56 Datasheet PDF - FMD

Part Number93C56
Description3-Wire Serial EEPROM
Manufacturers FMD 
Logo

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3-Wire Serial EEPROM
93C46/A, 93C56/A, 93C66/A
Standard Voltage and Low Voltage Operation:
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
FT93C46: 128 x 8 or 64 x 16
FT93C66: 512 x 8 or 256 x 16
Industry Standard 3-wire Serial Interface.
Self-Timed ERASE/WRITE Cycles (5ms max including auto-erase).
Sequential READ Function.
High Reliability: Typical 1 Million Erase/Write Cycle Endurance.
Industrial Temperature Range (-40o C to 85o C).
Standard 8-pin PDIP/SOIC/TSSOP Pb-free Packages.
The FT93C46/56/66 series are 1024/2048/4096 bits of serial Electrical Erasable and Programmable
Read Only Memory, commonly known as EEPROM. They are organized as 64/128/256 words of 16 bits
each when the ORG pin is connected to VCC (or unconnected) and 128/256/512 words of 8 bits (1 byte)
each when the ORG pin is tied to ground. The devices are fabricated with proprietary advanced CMOS
process for low power and low voltage applications. These devices are available in standard 8-lead
PDIP, 8-lead JEDEC SOIC and 8-lead TSSOP packages. Our extended VCC range (1.8V to 5.5V)
The FT93C46/56/66 is enabled through the Chip Select pin (CS), and accessed via a 3-wire serial
interface consisting of Data Input (DI), Data Output (DO), and Shift Clock (SCL). Upon receiving a READ
instruction at DI, the address is decoded and the data is clocked out serially on the data output pin DO.
The WRITE cycle is completely self-timed and no separate ERASE cycle is required before WRITE. The
WRITE cycle is only enabled when the part is in the ERASE/WRITE ENABLE state. Once a device
begins its self-timed program procedure, the data out pin (DO) can indicate the READY/BUSY status by
© 2013 Fremont Micro Devices Inc.
DS93CXX-A-page1


93C46/A, 93C56/A, 93C66/A
(A) READ
The Read (READ) instruction contains the Address code for the memory location to be read. After the
instruction and address are decoded, data from the selected memory location is available at the serial
output pin DO. Output data changes are synchronized with the rising edges of serial clock SK. It
should be noted that when a dummy bit (logic “0”) precedes the 8- or 16-bit data output string.
To assure data integrity, the part automatically goes into the Erase/Write Disable (EWDS) state when
power is first applied. An Erase/Write Enable (EWEN) instruction must be executed first before any
programming instructions can be carried out. Please note that once in the Erase/Write Enable state,
programming remains enabled until an Erase/Write Disable (EWDS) instruction is executed or VCC
(C) ERASE/WRITE DISABLE
To protect against accidental data disturb, the Erase/Write Disable (EWDS) instruction disables all
programming modes and should be executed after all programming operations. The operation of the
READ instruction is independent of both the EWEN and EWDS instructions and can be executed at
(D) ERASE
The Erase (ERASE) instruction programs all bits in the specified memory location to the logical “1”
state. The self-timed erase cycle starts once the ERASE instruction and address are decoded. The
DO pin outputs the READY/BUSY status of the part if CS is brought high after being kept low for a
minimum of 250 ns (tCS). A logic “1” at pin DO indicates that the selected memory location has been
erased, and the part is ready for another instruction.
The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the specified memory
location. The self-timed programming cycle, tWP, starts after the last bit of data is received at serial
data input pin DI. The DO pin outputs the READY/BUSY status of the part if CS is brought high after
being kept low for a minimum of 250 ns (tCS). A logic “0” at DO indicates that programming is still in
progress. A logic “1” indicates that the memory location at the specified address has been written with
the data pattern contained in the instruction and the part is ready for further instructions. A
READY/BUSY status cannot be obtained if the CS is brought high after the end of the self-timed
(F) ERASE ALL
The Erase All (ERAL) instruction programs every bit in the memory array to the logic “1” state and is
primarily used for testing purposes. The DO pin outputs the READY/BUSY status of the part if CS is
brought high after being kept low for a minimum of 250 ns (tCS). The ERAL instruction is valid only at
(G) WRITE ALL
The Write All (WRAL) instruction programs all memory locations with the data patterns specified in the
instruction. The DO pin outputs the READY/BUSY status of the part if CS is brought high after being
kept low for a minimum of 250 ns (tCS). The WRAL instruction is valid only at VCC = 5.0V ± 10%.
Confidential Rev. 0.8


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Featured Datasheets

Part NumberDescriptionManufacturers
93C56The function is 3-Wire Serial EEPROMs.
ATMEL Corporation
93C56The function is 16Kbit/ 8Kbit/ 4Kbit/ 2Kbit/ 1Kbit and 256bit 8-bit or 16-bit wide.
STMicroelectronics
93C56The function is Electrically Erasable Programmable Memories.
National Semiconductor

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